Product Information
Part : GT45F123
Brand : TOSHIBA
Decription : Silicon N Channel IGBT
Package : TO-220.
Collector-emitter voltage : 300 V
Gate-emitter voltage : ± 30 V
Collector current Pulse : 200 A
Junction temperature : 150 °C
Storage temperature range : −55 to 150 °C
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Low input capacitance: Cies = 2700pF (typ.)
• Peak collector current: ICP = 200 A (max)
• TO-220SIS package
