Reviews STB21NM60N MOSFET STMicroelectronics

STB21NM60N MOSFET STMicroelectronics

This series of devices implements the second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most
demanding high efficiency converters.

Application
 - Switching applications

Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance


STB21NM60N



Part : STB21NM60N
Brand : STMicroelectronics
Description : MOSFET N-CHANNEL
Package / Case: I2PAK-3
Id - Continuous Drain Current: 17 A
Vds - Drain-Source Breakdown Voltage: 600 V
Rds On - Drain-Source Resistance: 220 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage:  25 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 140 W