Product Information
Part : GT30J322
Brand : Toshiba
Description : N-channel IGBT Transistor, 30 A 600 V, 3-Pin
Package : TO-3PNIS
Configuration: Single
Dimensions: 15.8 x 5 x 21mm
Height: 21mm
Length: 15.8mm
Maximum Collector Emitter Voltage: 600 V
Maximum Continuous Collector Current: 30 A
Maximum Gate Emitter Voltage: ±20V
Maximum Operating Temperature: +150 °C
Mounting Type: Through Hole
Width:5mm
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