Reviews Transistors BSM25GD120DN2

BSM25GD120DN2 Infineon Technologies

Part : BSM25GD120DN2
Brand : Infineon Technologies
Description : IGBT Modules 1200V 25A FL BRIDGE
Package : Module
RoHS: RoHS Compliant Details
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 35 A
Gate-Emitter Leakage Current: 180 nA
Power Dissipation: 200 W
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2A
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw

Features
- Power module
- 3-phase full-bridge
- Including fast free-wheel diodes
- Package with insulated metal base plate