How to Use Power MOSFET IXFN38N100Q2 IXYS (Datasheet pdf)

How to Use Power MOSFET

Product Information

Part : IXFN38N100Q2
Brand : IXYS
Description : MOSFET 38 Amps 1000V 0.25 Rds
Package : SOT-227-4
Id - Continuous Drain Current: 38 A
Vds - Drain-Source Breakdown Voltage: 1 kV
Rds On - Drain-Source Resistance: 250 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage:  30 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 890 W
Mounting Style: SMD/SMT
Channel Mode: Enhancement
Configuration: Single Dual Source
Fall Time: 15 ns
Minimum Operating Temperature: - 55 C
Rise Time: 28 ns

Features
- Double metal process for low gate resistance
- miniBLOC, with Aluminium nitride isolation
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Fast intrinsic Rectifier

Applications
- DC-DC converters
- Switched-mode and resonant-mode power supplies
- DC choppers
- Pulse generators

Advantages
- Easy to mount
- Space savings
- High power density