How to Use IRFD110 Transistors Vishay Semiconductors

How to Use IRFD110

Product Information

Part : IRFD110
Brand : Vishay Semiconductors
Description : MOSFET 100V Single N-Channel HEXFET
Package : HVMDIP-4
Id - Continuous Drain Current: 1 A
Vds - Drain-Source Breakdown Voltage: 100 V
Rds On - Drain-Source Resistance: 540 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage:  20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.3 W
Mounting Style: Through Hole
Channel Mode: Enhancement
Configuration: Single Dual Drain
Fall Time: 16 ns
Minimum Operating Temperature: - 55 C
Rise Time: 16 ns

FEATURES
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- End Stackable
- 175 °C Operating Temperature
- Fast Switching and Ease of Paralleling
- Compliant to RoHS Directive 2002/95/EC