Bipolar Transistors - BJT Hi Vltg NPN Pwr transistor
ข้อมูลแบบเข้าใจง่าย (Specification)
Part : BU508AW
Brand : ST
Description : Bipolar Transistors - BJT Hi Vltg NPN Pwr transistor
Package : TO-247
Configuration: Single
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 700 V
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
DC Collector/Base Gain hfe Min: 10 at 0.1 A at 5 V, 5 at 4.5 A at 5 V
DC Current Gain hFE Max: 10
Maximum Power Dissipation: 125000 mW
Minimum Operating Temperature: - 65 C
Features
- State-of-the-art technology: Diffused collector “Enhanced generation”
- Stable performances versus operating temperature variation
- Low base-drive requirement
- Tight hFE range at operating collector current
- High ruggedness
- TO-247 semi-insulated power package
Applications
- Horizontal deflection output for CRT TV
- Switch mode power supplies for CRT TV
Description
The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
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