IGBT Transistors G-series A,B,C
ข้อมูลแบบเข้าใจง่าย (Specification)
Part : IXGQ90N33TCD1
Brand : IXYS
Description : IGBT Transistors G-series A,B,C
Package : TO-3P
Configuration: Single
Collector- Emitter Voltage VCEO Max: 330 V
Collector-Emitter Saturation Voltage: 1.8 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 90 A
Gate-Emitter Leakage Current: 200 nA
Power Dissipation: 200 W
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Features
- Low VCE(sat)
- for minimum On-State Conduction Losses
- Fast Switching
Applications
- PDP Screen Drivers
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