ข้อมูลแบบเข้าใจง่าย (Specification)
Part : IRFB4019PBF
Brand : IR
Description : MOSFET MOSFT 150V 17A 95mOhm 13nC Qg
Package : TO-220-3
Id - Continuous Drain Current: 17 A
Vds - Drain-Source Breakdown Voltage: 150 V
Rds On - Drain-Source Resistance: 80 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 4.9 V
Qg - Gate Charge: 13 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 80 W
Mounting Style: Through Hole
Configuration: Single
Fall Time: 7.8 ns
Forward Transconductance - Min: 14 S
Minimum Operating Temperature: - 55 C
Rise Time: 13 ns
Features
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low RDSON for Improved Efficiency
- Low QG and QSW for Better THD and Improved Efficiency
- Low QRR for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
Contact Us :
rtbselec@gmail.com
http://aecelec.blogspot.com/
http://www.Buy-Electronic.net/
Skype : Ohomodules
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